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Resonant tunneling through superconducting double barrier structures in graphene

机译:谐振隧穿超导双阻挡结构   石墨烯

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摘要

We study resonant tunneling through a superconducting double barrierstructure in graphene as a function of the system parameters. At each barrier,due to the proximity effect, an incident electron can either reflect as anelectron or a hole (specular as well as retro Andreev reflection in graphene).Similarly, transport across the barriers can occur via electrons as well as viathe crossed (specular and/or retro) Andreev channel, where a hole istransmitted nonlocally to the other lead. In this geometry, in the subgapregime, we find resonant suppression of Andreev reflection at certain energies,due to the formation of Andreev bound levels between the two superconductingbarriers, where the transmission probability T for electrons incident on thedouble barrier structure becomes unity. The evolution of the transport throughthe superconducting double barrier geometry as a function of the incidentenergy for various angles of incidence shows the damping of the resonance asnormal reflection between the barriers increases.
机译:我们研究了石墨烯中超导双势垒结构的共振隧穿与系统参数的关系。在每个势垒处,由于邻近效应,入射电子可以反射为电子或空穴(石墨烯中的镜面反射和安德列夫逆反射)。类似地,跨势垒的传输可以通过电子以及通过交叉的(镜面反射和/或逆向)安德列夫(Andreev)通道,其中一个孔非本地地传输到另一根导线。在这种几何结构中,在亚能隙体系中,由于在两个超导势垒之间形成了安德列夫键合能级,从而使入射在双势垒结构上的电子的传输概率T变为单位,因此在一定能量下我们发现了安德列夫反射的共振抑制。在不同入射角下,通过超导双势垒几何结构的传输随入射能量的变化关系表明,随着势垒之间法向反射的增加,共振的阻尼也减小。

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